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Ordering number : ENA1903A
ATP613
N-Channel Power MOSFET
500V, 5.5A, 2 Ω , ATPAK
Features
http://onsemi.com
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?
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Reverse recovery time trr=60ns(typ.)
Input Capacitance Ciss=350pF(typ.)
Halogen free compliance
?
?
ON-resistance RDS(on)=1.55 Ω (typ.)
10V drive
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
500
±30
5.5
Unit
V
V
A
Drain Current (Pulse)
Source-to-Drain Diode Forward Current (DC)
Source-to-Drain Diode Forward Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
IDP
IS
ISP
PD
Tch
Tstg
EAS
IAV
PW ≤ 10 μ s, duty cycle ≤ 1%
PW ≤ 10 μ s, duty cycle ≤ 1%
Tc=25 ° C
19
5.5
19
70
150
--55 to +150
93
5.5
A
A
A
W
° C
° C
mJ
A
Note : * 1 VDD=99V, L=5mH, IAV=5.5A (Fig.1)
* 2 L ≤ 5mH, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7057-001
ATP613-TL-H
Product & Package Information
? Package : ATPAK
? JEITA, JEDEC : -
? Minimum Packing Quantity : 3,000 pcs./reel
6.5
1.5
4.6
Packing Type: TL
Marking
2.6
4
0.4
0.4
ATP613
LOT No.
TL
Electrical Connection
2,4
1
2
3
0.55
0.8
0.6
0.4
1 : Gate
2.3
2.3
2 : Drain
1
3 : Source
4 : Drain
3
ATPAK
Semiconductor Components Industries, LLC, 2013
July, 2013
D2612 TKIM TC-00002855/D1510QB TKIM TC-00002545 No. A1903-1/7
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